J Integr Plant Biol. ›› 1991, Vol. 33 ›› Issue (3): -.

• Research Articles •    

Physiological Effects of Hydration-Dehydration Treatment on Soybean Seeds to Enhance Its Resistance to Imbibitional Chilling Injury

Liu Yan, Chen Hang and Zheng Guang-hua   

Abstract: The soybean (Glycine max Merrill) cv. “Heihe No. 3” which is sensitive to imbibitional chilling injury was used as experimental material. From the point of cell membranes and by means of physiological tests, the relation of hydration-dehydration to membrane repairation during rehydration in seeds was discussed, and a new point of view on the acting mechanisms of hydration-dehydration was approached. The resistance of seed to imbibitional chilling injury was obviouslv enhanced, its apparent efficiency displayed the enhance of seed rigor, reduction of leakage, especially the K+/Na+ ratio; increasing the K+-Na+-ATPase activity,. The facts indicate that the function of cytoplasmic membrane was enhanced and maintained normally. In the meantime, the activities of SOD, catalase and peroxidase were all enhanced, and the production of volatile aldehydes were decreased. It shows that the function of cell antiautoxidation system was greatly improved. Based on a series of physiological and biochemical index mentioned above and the comparison of water-absorbed curves, a postulated model of membrane system induced by hydration-dehydration treatment is given. It is considered that the effects of the two processes, i,e. physical membrane repairation as well as the physiological and biochemical repairation, will be persisted in the redehydrated seeds.

Key words: Hydration-dehration, Soybean seed, lmbibitional chilling injury, Seed vigor, Repairation of membrane system

Editorial Office, Journal of Integrative Plant Biology, Institute of Botany, CAS
No. 20 Nanxincun, Xiangshan, Beijing 100093, China
Tel: +86 10 6283 6133 Fax: +86 10 8259 2636 E-mail: jipb@ibcas.ac.cn
Copyright © 2022 by the Institute of Botany, the Chinese Academy of Sciences
Online ISSN: 1744-7909 Print ISSN: 1672-9072 CN: 11-5067/Q